Polycrystalline silicon liquid crystal display device and fabrication method thereof

ABSTRACT

A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region. Because the number of masks used for forming the storage capacitor is reduced, the fabricating process of a poly-silicon liquid crystal display device can be simplified.

This application claims the benefit of Korean Patent Application No.2003-77367, filed on Nov. 3, 2003, which is hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a poly-silicon liquid crystal display(LCD) device and a method for fabricating the same. More particularly,the present invention relates to a method for fabricating a poly-siliconLCD device having a capacitor that reduces the number of masks.

2. Description of the Related Art

In general, a liquid crystal display (LCD) device, for example, has adisplay unit for displaying images and a driving circuit unit fordriving the display unit, wherein the display unit and the drivingcircuit unit are connected to each other by a tape carrier package(TCP). Alternatively, a LCD device integrated with driving circuits(hereinafter “integrated-type LCD device”) has a display unit and adriving circuit unit, wherein the display unit and the driving circuitunit are formed on the same substrate.

Accordingly, the integrated-type LCD device can be more easilyfabricated than the general LCD device. For the integrated-type LCDdevice, poly-silicon is commonly used as an active layer, sincepoly-silicon has better carrier mobility than amorphous silicon. Thus,the integrated-type LCD with poly-silicon transistors can operate at ahigh speed. For example, a carrier mobility of an amorphous thin filmtransistor (TFT) is 0.1˜1 cm²/Vsec, while a carrier mobility of apoly-silicon TFT formed by an excimer laser exceeds 100 cm²/Vsec.

The integrated-type LCD device will now be described with reference toFIG. 1.

FIG. 1 is a schematic plan view of a poly-silicon LCD device accordingto a related art. Referring to FIG. 1, an integrated-type LCD deviceincludes a display unit 101 having pixels arranged in a matrixconfiguration and a driving circuit unit 102 arranged along an outerperiphery of the display unit 101 for driving the display unit. Thedriving circuit unit 102 further includes a gate driver 104 and a datadriver 103. The display unit 101 and the driving circuit unit 102 areformed on the same substrate. In the driving circuit unit 102,complementary metal oxide semiconductor (CMOS) devices having P-typeTFTs and N-type TFTs drive the pixels of the display unit.

The switching devices may be formed by a silicon on glass (SOG) methodwhich uses a poly-silicon layer grown on a substrate as a channel layer.The P-type TFT and the N-type TFT have the same structure, and but theyare different in types of ions injected into the poly-silicon layer.

The structure and fabrication process of the poly-silicon LCD devicewill now be described, for which a P-type TFT fabrication process istaken as an example.

Each pixel includes a TFT as a switching device for driving a pixel anda capacitor for storing a data signal. FIG. 2 is a sectional viewillustrating a structure of a poly-silicon TFT having a capacitoraccording to a related art. Referring to FIG. 2, a poly-silicon layer202 is used as an active layer 202 a of a P-type TFT, and is also usedas an electrode 202 b of a storage capacitor. A gate insulating layer203 is on the poly-silicon layer 202, and a gate metal 205 is formed onthe gate insulating layer 203. A gate electrode 205 a and a storagecapacitor electrode 205 b are formed by patterning the gate metal 205 bya photolithography process. An interlayer insulator 206 is formed on thegate electrode 205 a and the storage capacitor electrode 205 b, and acontact hole 210 for connecting source/drain electrodes 207 and 208 tothe active layer is formed through the interlayer insulator 206 and thegate insulating layer 203. The source/drain electrodes 207 and 208contact the active layer 202 a through the contact hole 210. Apassivation layer 209 is formed on the resultant structure in order toprotect the TFT.

A fabrication process of the poly-silicon liquid crystal display device(LCD) will now be described with reference to FIGS. 3A to 3E.

As shown in FIG. 3A, an amorphous silicon layer is formed on a substrate301 by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Inorder to transform the amorphous silicon layer to a poly-silicon layer,the amorphous silicon layer undergoes a heat treatment at a hightemperature in a furnace or by a laser annealing. With the heattreatment and a photolithography process, the amorphous silicon layerbecomes a poly-silicon layer 302, which includes a TFT region 302 a anda storage capacitor region 302 b.

In order to use the storage capacitor region 302 b of the poly-siliconlayer as one of the electrodes of a storage capacitor, the storagecapacitor region 302 b is highly doped with impurity ions. FIG. 3Billustrates a doping process (metallizing) in which P+ ions are injectedinto the storage capacitor region 302 b. Referring to FIG. 3B, after thepoly-silicon layer is formed on the substrate 301, the TFT region 302 ais covered by a photo-resist 304, and the storage capacitor region 302 bis exposed for the doping process. Accordingly, a masking process isrequired in order to form the storage capacitor region 302 b accordingto the related art.

Next, as shown in FIG. 3C, a gate insulating layer 303 is formed on thepoly-silicon layer 302, and a gate electrode 305 a and an electrode 305b of the storage capacitor are formed on the gate insulating layer 303.The gate electrode 305 a and the electrode 305 b of the storagecapacitor are formed of the same metal layer. Thus, the storagecapacitor has the storage capacitor region 302 b, which is a dopedpoly-silicon layer, and the electrode 305 b as storage capacitorelectrodes, and the gate insulation layer 303 as a dielectric layer.

After forming the gate electrode 305 a, source and drain regions areformed by injecting p-type impurity ions such as boron into thepoly-silicon layer using the gate electrode 305 a as a mask, as shown inFIG. 3D.

Next, as shown in FIG. 3E, an interlayer insulator 306 of siliconnitride or silicon oxide is formed on the gate electrode 305 a, and acontact hole 310 is formed. Then, a conductive layer is deposited in thecontact hole 310 and on the interlayer insulator 306, and is thenpatterned to form source/drain electrodes 307 and 308. Thus, thesource/drain electrodes 307 and 308 contact the source and drain regionsthrough the contact hole 310. After forming the source/drain electrodes,a passivation film 309 is formed on the entire surface of the substrateto protect the source/drain electrode from an external environment, tothereby complete the formation of a P-type poly-silicon TFT having astorage capacitor.

In the fabrication method described above, the step of forming one ofthe storage capacitor electrodes using a poly-silicon layer will bedescribed in more detail with reference to FIG. 4A to 4C.

As shown in FIG. 4A, a poly-silicon layer 401 having a predeterminedpattern is formed on a substrate. The poly-silicon layer 401 is formedby depositing an amorphous silicon layer on the substrate, bycrystallizing the amorphous silicon layer using a heat treatment, and bypatterning the crystallized silicon layer. The poly-silicon layer willbe used as an active layer of a TFT and as one of the electrodes of astorage capacitor. In order to use the poly-silicon layer 401 as anelectrode of the storage capacitor, the portion of the poly-siliconlayer corresponding to the electrode of the storage capacitor (storagecapacitor region) needs to be metalized.

FIG. 4B illustrates a process of metalizing the storage capacitorregion. Referring to FIG. 4B, a mask 403 covers the poly-silicon layerincluding a TFT region 401 a except for the storage capacitor region 401b. Then, impurity ions are injected into the storage capacitor region401 b. A photo-resist is used as the mask 403. Therefore, the process ofmetalizing the storage capacitor region 401 b includes coating aphoto-resist on the poly-silicon layer; exposing the storage capacitorregion 401 b using a photo-mask; developing the photo-resist; injectingimpurity ions; and removing the photo-resist.

Subsequently, after a gate insulating layer is formed on thepoly-silicon layer, a metal layer is formed to form a gate electrode 404and a storage capacitor electrode 405 by a photolithography process, asshown in FIG. 4C. After the gate electrode 404 and the storage capacitorelectrode 405 are formed, follow-up processes proceed to form a TFT asdescribed above with reference to FIGS. 3D and 3E.

As stated above, the liquid crystal display device using thepoly-silicon layer as an electrode of the storage capacitor isdisadvantageous in that an additional photo-mask process is required tometalize the poly-silicon layer of the storage capacitor region.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a liquid crystaldisplay (LCD) device and a method for fabricating the same thatsubstantially obviate one or more of the problems due to limitations anddisadvantages of the related art.

An advantage of the present invention is to provide a liquid crystaldisplay (LCD) device that uses a poly-silicon layer as an electrode of astorage capacitor and a method for fabricating the same that reduce thenumber of masks.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described herein, amethod for fabricating a poly-silicon liquid crystal display deviceincludes: forming a poly-silicon layer including a TFT region and astorage capacitor region on a substrate, wherein the capacitor regionincludes an impurity injection region having a N-type impurity injectionregion and a P-type impurity injection region; forming a gate electrodeand a storage capacitor electrode on the poly-silicon layer; injectingan N-type impurity ion with a high doping density into the N-typeimpurity injection region and the TFT region; injecting a P-typeimpurity ion with a high doping density into the P-type impurityinjection region; forming an insulating layer on the gate electrode andthe storage electrode; and forming a pixel electrode on the insulatinglayer, wherein the pixel electrode is electrically connected to theimpurity injection region in the storage capacitor region.

In another aspect of the present invention, a poly-silicon liquidcrystal display device includes a poly-silicon layer having a TFT regionand a storage capacitor region, wherein the storage capacitor regionincludes an impurity injection region having an N-type impurityinjection region and a P-type impurity injection region; a gateelectrode and a capacitor electrode on the poly-silicon layer; aninsulating layer on the gate electrode and a capacitor electrode; apassivation layer on the insulating layer; a pixel electrode on thepassivation layer; and a conductive layer for electrically connectingthe impurity injection region to the pixel electrode.

In yet anther aspect of the present invention, a poly-silicon liquidcrystal display device includes a poly-silicon layer including a TFTregion and a storage capacitor region, wherein the storage capacitorregion includes an impurity injection region having an N-type impurityinjection region and a P-type impurity injection region; a firstinsulating layer on the TFT region and the storage capacitor region; agate electrode and a capacitor electrode on the first insulating layer;a second insulating layer on the gate electrode and the capacitorelectrode; a passivation layer formed on the second insulating layer; acontact hole passing through the first insulating layer, the secondinsulating layer, and the passivation layer to expose the impurityinjection region; and a pixel electrode on the passivation layer andelectrically connected to the impurity injection region through thecontact hole.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a sectional view illustrating a liquid crystal display deviceintegrated with driving circuits;

FIG. 2 is a sectional view illustrating a structure of a poly-siliconthin film transistor according to a related art;

FIGS. 3A to 3E show sequential processes of fabricating the poly-siliconthin film transistor in accordance with the related art;

FIGS. 4A to 4C show sequential processes of forming a capacitorelectrode in the fabricating processes of the poly-silicon thin filmtransistor in accordance with the related art;

FIGS. 5A to 5E are sequential processes of forming a gate line and acapacitor electrode in the fabricating processes of a poly-silicon thinfilm transistor according to an embodiment of the present invention;

FIGS. 6A to 6F are sequential processes of fabricating a poly-siliconthin film transistor according to an embodiment of the presentinvention;

FIG. 6G is a sectional view illustrating a structure of a poly-siliconthin film transistor in accordance with a different embodiment of thepresent invention; and

FIGS. 7A to 7C are graphs illustrating capacitance characteristics.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to embodiments of the presentinvention, examples of which are illustrated in the accompanyingdrawings.

A poly-silicon liquid crystal display device and a method forfabricating the same according to an embodiment of the present inventionwill now be described with reference to FIGS. 5A to 5F and 6A to 6D.

The poly-silicon liquid crystal display device includes a display uniton which plurality of pixels are arranged in a matrix form and a drivingunit having P-type TFTs and N-type TFTs for driving the pixels.

The liquid crystal display device has a plurality of TFTs. Forexplanation purposes, a process of forming one TFT will now be describedwith reference to FIGS. 5A to 5F.

FIGS. 5A to 5F illustrate a process of fabricating one TFT used for apoly-silicon liquid crystal display device.

As shown in FIG 5A, in order to form a TFT, a silicon layer is formed ona substrate, and is patterned to form a poly-silicon layer 501 with apredetermined pattern. The poly-silicon layer 501 includes a TFT elementregion 501 a and a storage capacitor region 501 b. The storage capacitorregion 501 b is divided into an impurity injection region 502 a and acapacitor electrode region 502 b. The impurity injection region 502 amay be formed at a certain portion of the storage capacitor region 501b.

To form the poly-silicon layer 501, an amorphous silicon layer is formedon the substrate by a PECVD method, and is then crystallized using aheat treatment.

Silicon particles are randomly arranged in the amorphous silicon layer.When the silicon particles are annealed, crystals start to grow fromseeds, and the amorphous silicon transforms to a poly-silicon. Thepoly-silicon layer has a large number of grains, each of which is asingle crystal, and the grains are in contact with one another withgrain boundaries therebetween.

The smaller the area of the grain boundaries, the higher the movingspeed of carriers such as electrons or holes. This is because the grainboundaries act as a barrier when carriers moves in the poly-siliconlayer. If the size of the grains is large, the area of the grainboundaries becomes smaller, and thus, the mobility of the carriersbecomes higher.

In general, when a LCD device uses a glass substrate, it is undesirableto crystallize an amorphous silicon layer formed on the glass substrateto a poly-silicon layer by a heat treatment at a high temperature in afurnace. This is because the glass substrate deforms at about 600° C. orhigher. Therefore, according to an embodiment of the present invention,a laser annealing method is used to crystallize the amorphous siliconlayer. For the laser annealing method, a laser available for an instantheating at a high temperature is irradiated on the amorphous siliconlayer formed on the substrate to crystallize the amorphous silicon. Inthis way, the silicon layer can be crystallized without deforming theglass substrate by the laser annealing.

For the LCD devices having poly-silicon TFTs, a laser for thecrystallization may have an energy to completely melt the amorphoussilicon layer, and then, the channel layer of the poly-silicon TFTs maybe constructed by a sequential lateral solidification (SLS) method forinducing a lateral solidification to minimize the grain boundary areas.The poly-silicon TFTs formed by this SLS method have, in general, bettertransistor characteristics.

A laser annealing method including the SLS method and a heat treatmenthave been described for a method to crystallize an amorphous siliconlayer to a poly-silicon layer. However, it should be understood thatother methods can be used for the crystallization, so long as it cantransform an amorphous silicon layer into a poly-silicon layer accordingto the principles of the present invention.

Though not shown, after the poly-silicon layer is formed on thesubstrate, a gate insulating layer of silicon oxide (SiO₂) may be formedon the poly-silicon layer to insulate the gate electrode and thepoly-silicon layer. The gate insulating layer may be formed by a PECVDmethod.

After the gate insulating layer is formed on the substrate, as shown inFIG. 5B, a gate line 503 and a gate electrode 504 are formed at the TFTregion 501a of the poly-silicon layer 501, and an electrode 505 of thestorage capacitor is formed at the capacitor electrode region 502b. InFIG SB, the region where the gate electrode 504 overlaps thepoly-silicon layer becomes the channel region of the TFT. When thestorage capacitor electrode 505 is formed at the capacitor electroderegion 502 b, the rest portion of the storage capacitor region 501 bremains as the impurity injection region 502 a.

After the gate electrode 504 and the storage capacitor electrode 505 areformed, an impurity ion is injected into the impurity injection region502 a.

The impurity injection region 502 a is divided into an N-type impurityinjection region 506 a and a P-type impurity injection region 506 b. AnN-type impurity with a high doping density is injected into the N-typeimpurity injection region 506 a to form a N-type TFT. Alternatively, aP-type impurity with a high doping density is injected into the P-typeimpurity injection region 506 b to form a P-type TFT. Thus, withoutusing an additional mask to form the N-type impurity injection region506 a and the P-type impurity injection region 506 b, the N-typeimpurity region 506 a or the P type impurity region 506 b can be formedby simply adding a pattern to the mask used in the process of formingthe N type TFT or the P type TFT.

The above process will be described in more detail with reference toFIGS. 5C and 5D.

The poly-silicon liquid crystal display device uses a CMOS as an elementfor the driving circuit in the driving unit. A CMOS has a pair of anN-type TFT and a P-type TFT. Especially, the N-type TFT is generallyfabricated as a TFT with a lightly doped drain (LDD) structure(hereinafter “LDD-type TFT) to prevent a leakage current due toso-called hot-carrier effect. In the LDD-type TFT, an impurity with alow doping density is injected into an active layer adjacent to achannel to form an LDD region, and an impurity of N-type with a highdoping density is injected to the source and drain regions, which areouter edges of the LDD region. The injection process may proceed withforming the N-type TFT with a LDD structure followed by forming theP-type TFT.

First, the injection process for the N-type TFT with a LDD structurewill be described with reference to FIG. 5C.

N-type impurity ion with a low doping density is injected into theentire surface of the substrate having the gate electrode 504 and thestorage capacitor electrode 505 of the storage capacitor. At this time,the gate electrode 504 in the TFT region 501 serves as a mask,preventing the N-type impurity from being injected into the channel areaof the TFT. The impurity ion with a low doping density is also injectedinto the impurity ion injection region 502 b of the storage capacitor aswell as the P-type impurity injection region 506 b. However, the N-typeimpurity ion with a low doping density injected into the P-type impurityinjection region 506 b will be offset during a later injection processin which a P-type impurity ion with a high doping density is injectedinto the P-type impurity injection region 506 b.

Subsequently, an N-type impurity ion with a high doping density isinjected into the entire surface, with a photo resist pattern 507covering the portion of the TFT region 501 a and the P-type impurityinjection region 506 b, as shown in FIG 5C. As it is clear from FIG. 5C,the TFT that will be formed at the TFT region 501 a after completing thefabricating process has a dual gate structure. The photo-resist patternare divided into a first photo-resist pattern 507 a, a secondphoto-resist pattern 507 b, and a third photo-resist pattern 507 c. Thefirst photo resist pattern 507 a is formed on the P type impurityinjection region 506 b, and the second and third photo-resist patternsare formed on the portions of the TFT regions in which the channel areaand LDD region of the TFT will be formed. The photo-resist pattern 507 aon the P-type impurity injection region 506 b can be formed by simplyadding a pattern to the mask that is used for the injection process forforming the N-type source and drain regions.

Next, an N-type impurity ion with a high doping density is injected toform the source and drain regions of the N-type TFT using a photo-resistas a mask. With this process, the N-type TFT with a LDD structure isformed at the N-type TFT region 501 a, and the N-type impurity injectionregion 506 a is highly doped with the N-type impurity.

Accordingly, the N-type TFT with a LDD structure is formed on thesubstrate, and a process for forming the P-type TFT is then performed.

To form the P-type TFT, a photo resist pattern 508 is formed on the TFTregion and the N-type impurity injection region 506 a, with the P-typeimpurity injection region 506 b being exposed. Subsequently, a P-typeimpurity ion with a high doping density is injected to the P-typeimpurity injection region 506 b. This process will now be described withreference to FIG. SD.

In this embodiment of the present invention, the P-type TFT is not shownin FIG. 5D, because descriptions are mainly focused on the formation ofthe N-type TFT. However, the P-type TFT also exists at a predeterminedregion of the substrate according to the present invention.

In order to inject a P-type impurity ion with a high doping density intothe P type impurity injection region 506 b and source/drain regions ofthe P-type TFT (not shown), the N-type TFT region is covered with aphoto-resist including the photo-resist pattern 508, with the P-typeimpurity injection region 506 b and the source/drain regions of theP-type TFT (not shown) being exposed. Then, the P-type impurity ion witha high doping density is injected to the P-type impurity injectionregion 506 b and the source/drain regions of the P-type TFT (not shown).

As a result, the N-type and P-type impurity ions are injected into theimpurity injection region 502 a without using an additional mask.

FIG. 5E shows an active layer including the impurity ion injectionregion 502 a of the storage capacitor injected with the N-type andP-type impurity ions.

The impurity ion injection region 502 a is connected to a pixelelectrode (not shown) through a first contact hole 520 and a secondcontact hole 530 by means of an electrode material 540. The firstcontact hole 520 is connected to the impurity ion injection region 502a, and the second contact hole 530 is connected to the pixel electrode.

A fabrication process of a poly-silicon LCD device according to anembodiment of the present invention will now be described in more detailwith reference to FIGS. 6A to 6F which show cross-sectional views takenalong the line I-I′ in FIG SE.

With reference to FIG. 6A, an amorphous silicon layer is formed on asubstrate 500 and undergoes a heat treatment to form a poly-siliconlayer. Next, the poly-silicon layer is patterned to form an active layer501.

A gate insulating layer is formed on the active layer 501, for example,by a PECVD method, on which a gate metal is deposited. Thereafter, thegate metal is patterned to form the gate electrode 504, the gate line503 and the storage electrode 505.

As shown in FIG. 6B, an N-type impurity ion with a low doping density isthen injected into the entire surface of the substrate 500 on which thegate electrode 504, the gate line 503 and the storage electrode 505 havebeen formed. At this time, the gate electrode 504, the gate line 503 andthe storage electrode 505 serve as a mask, so that the N-type impurityion with a low doping density is injected into source/drain regions 601and an impurity ion injection region 502 a.

Referring to FIG. 6C, photo resist patterns 507 a, 507 b and 507 c aresubsequently formed on the substrate to inject an N-type impurity ionwith a high doping density into an N-type impurity injection region 506a of the impurity ion injection region 502 a and the portion of thesource/drain regions 601 a, which excludes the LDD region 601 b, of theN-type TFT. The photo-resist patterns are used to block the N-typeimpurity ion with a high doping density. Next, an N-type impurity ionwith a high doping density is injected into the TFT region 501 a usingthe photo-resist patterns 507 b and 507 c as masks, so that an N-typeTFT with a LDD structure is formed on the substrate 500.

At this time, the N-type impurity injection region 506 a of the impurityinjection region 502 a of the storage capacitor is highly doped with theN-type impurity ion, while the P-type impurity injection region 506 b iscovered by the photo resist pattern 507 a and is only doped with theN-type impurity ion with a low doping density.

Next, as shown in FIG. 6D, another photo-resist pattern 508 is formed onthe TFT region and N-type impurity injection region 506 a, with the-Ptype impurity injection region 506 b being exposed. When a P-typeimpurity ion with a high doping density is injected into the entiresurface of the substrate with the photo-resist pattern 508, the P-typeimpurity injection region 506 b of the storage capacitor is highly dopedwith the P-type impurity ion, offsetting the N-type impurity ion with alow doping density injected in a previous process.

After the P-type and N-type impurity ions are injected into the impurityregion of the capacitor, as shown in FIG. 6E, an insulation layer 509made of, for example, silicon nitride or silicon oxide is formed on theentire surface of the substrate. Then, a source electrode 510 and anelectrode material 540 is formed by depositing a metal layer andpatterning the metal layer. The electrode material 540 serves as a drainelectrode of the TFT and as a bridge that connects the impurityinjection region with a pixel electrode. The electrode material 540 isconnected to the impurity injection region through the first contacthole 520 and is connected to the pixel electrode (not shown) through thesecond contact hole, as shown in FIG. 5E.

Referring to FIG. 6F, a passivation film 512 for planarization andprotection is then formed on the entire surface of the substrate havingthe source electrode 510 and the electrode material 540.

Next, the second contact hole 530 is formed on the passivation film 512to connect the electrode material 540 with the pixel electrode 513.Thereafter, the pixel electrode 513 made of a transparent conductor isformed on the substrate, thereby completing the formation of a switchingdevice for driving the liquid crystal display device.

Alternatively, the pixel electrode 513 may be directly connected to theimpurity injection region without the electrode material 540, as shownin FIG. 6G

A CMOS having a pair of an N-type TFT and a P-type TFT is commonly usedfor driving circuits which require stable operation instead ofhigh-speed operation. Thus, when the CMOS described above is formed inthe driving unit of a LCD device, the pixel electrode may beunnecessary.

As described above, according to the present invention, highly dopingthe source/drain regions of the P-type TFT and the P-type impurityinjection region 506 b can be performed at the same time with one mask.Thus, the fabrication process according to the present invention reducesa number of masks, compared with the related art fabricating process.

Additionally, according to the present invention, one of the electrodesof the storage capacitor corresponding to the impurity ion injectionregion 502 a has both the P-type impurity injection region 506 b and theN-type impurity ion injection region 506 a. The impurity ion injectionregion 502 a can be formed at an arbitrary region of the storagecapacitor region 501 b, and serves as an electrode of the storagecapacitor. This structure provides an additional advantage in anapplication of a poly-silicon LCD, which will be described below in moredetail.

In a line inversion type liquid crystal display device in which apositive (+) voltage and a negative (−) voltage are alternately appliedto the pixels, when the storage region is not doped with an impurityion, the capacitance is not uniform. The reason is described withreference to FIGS. 7A to 7C.

FIG. 7A to 7C are graphs showing the characteristics of a storagecapacitor used in conjunction with an N-type TFT or a P-type TFT in aline inversion type liquid crystal display device.

In case of the N-type TFT, since a poly-silicon layer that is highlydoped with an N-type impurity is used as one electrode of the storagecapacitor, when a negative voltage is applied to the electrode of thestorage capacitor, electrons, which are the majority carrier in theN-type TFT, are pushed downwardly in the poly-silicon layer. Then, thedistance between the two electrodes of the storage capacitor increases,and the amount of the capacitance decreases. As C=∈A/d (C: capacitance,∈: dielectric constant, ‘A’: area, and ‘d’: distance), the capacitance Cis reduced. In contrast, when a positive (+) voltage is applied to theone electrode of the storage capacitor, which is formed of a highlydoped poly-silicon layer, the distance ‘d’ decreases, and thus thecapacitance C increases.

The same principle applies to the P-type TFT. Thus, in case of theP-type TFT in which holes are the majority carrier, when a positive (+)voltage is applied to the one electrode of the storage capacitor formedof a highly doped poly-silicon layer, the capacitance decrease, whereaswhen a negative (−) voltage is applied, the capacitance increases, asshown in FIGS. 7A and 7B.

In the embodiment of the present invention described above, one of theelectrodes of the storage capacitor has both the N-type impurityinjection region and the P-type impurity injection region, both of whichare formed of a highly doped poly-silicon layer. Thus, even though thevoltage is alternately applied in the line inversion type liquid crystaldisplay device, the capacitance can be uniformly maintained.

In other words, when a positive (+) voltage is applied to one electrodeof the capacitor, the impurity ions doped in the N-type impurity regionof the storage capacitor are supplied to the poly-silicon layer, therebymaintaining a uniform capacitance, and when a negative (−) voltage isapplied to one electrode of the capacitor, the impurity ions doped inthe P-type impurity region of the storage capacitor are supplied to thepoly-silicon layer, thereby maintaining a uniform capacitance. Thus,even though positive and negative voltages are alternately applied tothe data lines, the capacitance of the storage capacitor can bemaintained uniformly.

As described above, the present invention has the following advantages.Because a number of masks used for forming the storage capacitor isreduced, a fabricating process of a poly-silicon LCD device according tothe present invention can be simplified. In addition, when apoly-silicon LCD device uses a line inversion method for driving thepixels, a capacitance of the storage capacitor in each pixel can beuniformly maintained.

It will be apparent to those skilled in the art that variousmodifications and variation can be made in the present invention withoutdeparting from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. A method for fabricating a poly-silicon liquid crystal display (LCD)device comprising: forming a poly-silicon layer including a TFT regionand a storage capacitor region on a substrate, wherein the capacitorregion includes an impurity injection region having a N-type impurityinjection region and a P-type impurity injection region; forming a gateelectrode and a storage capacitor electrode on the poly-silicon layer;injecting an N-type impurity ion with a high doping density into theN-type impurity injection region and the TFT region; injecting a P-typeimpurity ion with a high doping density into the P-type impurityinjection region; forming an insulating layer on the gate electrode andthe storage electrode; and forming a pixel electrode on the insulatinglayer, wherein the pixel electrode is electrically connected to theimpurity injection region in the storage capacitor region.
 2. The methodof claim 1, injecting a P-type impurity ion with a high doping densityinto the P-type impurity injection region further includes blocking theN-type impurity injection region and the TFT region.
 3. The method ofclaim 1, injecting a N-type impurity ion with a high doping density intothe N-type impurity injection region further includes blocking theP-type impurity injection region and the channel region of the TFTregion.
 4. The method of claim 2, wherein a photosensitive film is usedin blocking.
 5. The method of claim 3, wherein a photosensitive film isused in blocking.
 6. The method of claim 1, wherein forming apoly-silicon layer further includes: forming an amorphous silicon layeron the substrate; crystallizing the amorphous silicon layer; andpatterning the crystallized silicon layer.
 7. The method of claim 1,further comprising injecting an N-type impurity with a low dopingdensity in the impurity injection region.
 8. The method of claim 1,further comprising forming a conductive layer on the insulating layer,the conductive layer is used as a conduit to electrically connect thepixel electrode to the impurity injection region.
 9. A poly-siliconliquid crystal display device comprising: a poly-silicon layer having aTFT region and a storage capacitor region, wherein the storage capacitorregion includes an impurity injection region having an N-type impurityinjection region and a P-type impurity injection region; a gateelectrode and a capacitor electrode on the poly-silicon layer; aninsulating layer on the gate electrode and a capacitor electrode; apassivation layer on the insulating layer; a pixel electrode on thepassivation layer; and a conductive layer for electrically connectingthe impurity injection region to the pixel electrode.
 10. The device ofclaim 9, wherein the N-type impurity injection region has substantiallythe same area as the P-type impurity injection region.
 11. The device ofclaim 9, wherein the N type impurity injection region and the P typeimpurity injection region are adjacent to each other.
 12. The device ofclaim 9, wherein the impurity injection region is one electrode of thestorage capacitor.
 13. The device of claim 9, wherein a poly-crystallinesilicon liquid crystal display device further includes a secondinsulating layer on the poly-silicon layer.
 14. The device of claim 9,wherein the poly-crystalline silicon liquid crystal display device usesa line inversion method as a pixel driving method.
 15. The device ofclaim 9, wherein the storage capacitor region is divided into a storageelectrode region and an impurity injection region.
 16. The device ofclaim 9, wherein the pixel electrode is electrically connected to theimpurity injection region through a first contact hole and a secondcontact hole, wherein the first contact hole connects the pixelelectrode to the conductive layer, and second contact hole connects theimpurity injection region to the conductive layer.
 17. A poly-siliconliquid crystal display device comprising: a poly-silicon layer includinga TFT region and a storage capacitor region, wherein the storagecapacitor region includes an impurity injection region having an N-typeimpurity injection region and a P-type impurity injection region; afirst insulating layer on the TFT region and the storage capacitorregion; a gate electrode and a capacitor electrode on the firstinsulating layer; a second insulating layer on the gate electrode andthe capacitor electrode; a passivation layer formed on the secondinsulating layer; a contact hole passing through the first insulatinglayer, the second insulating layer, and the passivation layer to exposethe impurity injection region; and a pixel electrode on the passivationlayer and electrically connected to the impurity injection regionthrough the contact hole.